N-Channel MOSFET, 22 A, 600 V, 3-Pin D2PAK Infineon IPB60R099C7ATMA1
Product Information
Maximum Drain Source Voltage:
600 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Series:
IPB60R
Channel Type:
N
Maximum Gate Threshold Voltage:
4V
Maximum Drain Source Resistance:
99 mΩ
Package Type:
D2PAK (TO-263)
Number of Elements per Chip:
1
Maximum Continuous Drain Current:
22 A
Transistor Material:
Si
Pin Count:
3
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Yes. Our products in MOSFETs category are shipped in lowest possible time.
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Yes. We ship IPB60R099C7ATMA1 Internationally to many countries around the world.
This is N-Channel MOSFET 22 A 600 V 3-Pin D2PAK manufactured by Infineon. The manufacturer part number is IPB60R099C7ATMA1. It has a maximum of 600 v drain source voltage. The product is available in surface mount configuration. The product carries enhancement channel mode. The product ipb60r, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The product carries 4v of maximum gate threshold voltage. It provides up to 99 mω maximum drain source resistance. The package is a sort of d2pak (to-263). It consists of 1 elements per chip. While 22 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. It contains 3 pins.
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