Dual N-Channel MOSFET Transistor & Diode, 42 A, 55 V, 3-Pin DPAK Infineon IRFR1010ZTRPBF

Infineon

Product Information

Automotive Standard:
No
Maximum Power Dissipation Pd:
366W
Product Type:
MOSFET & Diode
Maximum Drain Source Voltage Vds:
55V
Channel Mode:
Enhancement
Typical Gate Charge Qg @ Vgs:
460nC
Series:
HEXFET
Maximum Gate Source Voltage Vgs:
20 V
Height:
20.7mm
Width:
5.31 mm
Length:
15.87mm
Package Type:
TO-252
Minimum Operating Temperature:
-55°C
Maximum Drain Source Resistance Rds:
7.5mΩ
Standards/Approvals:
No
Maximum Continuous Drain Current Id:
42A
Channel Type:
Type N
Maximum Operating Temperature:
175°C
Pin Count:
3
Mount Type:
Surface
RoHs Compliant
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This is Dual N-Channel MOSFET Transistor & Diode 42 A 55 V 3-Pin DPAK manufactured by Infineon. The manufacturer part number is IRFR1010ZTRPBF. The product complies with automotive standard - no. mosfet & diode is a versatile product designed to provide user-defined applications. The product carries enhancement channel mode. The product hexfet, is a highly preferred choice for users. In addition, the height is 20.7mm. Furthermore, the product is 5.31 mm wide. Its accurate length is 15.87mm. The package is a sort of to-252. Whereas, the minimum operating temperature of the product is -55°c. The product is available in [Cannel Type] channel. It has a maximum operating temperature of 175°c. It contains 3 pins. It has a surface type mount .

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Datasheet - IRFR1010ZTRPBF(Technical Reference)

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Yes. Our products in MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Dual N-Channel MOSFET Transistor & Diode, 42 A, 55 V, 3-Pin DPAK Infineon IRFR1010ZTRPBF. You can also check on our website or by contacting our customer support team for further order details on Dual N-Channel MOSFET Transistor & Diode, 42 A, 55 V, 3-Pin DPAK Infineon IRFR1010ZTRPBF.