Dual N-Channel MOSFET Transistor & Diode, 42 A, 55 V, 3-Pin DPAK Infineon IRFR1010ZTRPBF
Product Information
Maximum Drain Source Voltage:
55 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Series:
HEXFET
Channel Type:
N
Maximum Gate Threshold Voltage:
20V
Maximum Drain Source Resistance:
0.0075 O
Package Type:
DPAK (TO-252)
Number of Elements per Chip:
2
Maximum Continuous Drain Current:
42 A
Pin Count:
3
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Yes. Our products in MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Dual N-Channel MOSFET Transistor & Diode, 42 A, 55 V, 3-Pin DPAK Infineon IRFR1010ZTRPBF. You can also check on our website or by contacting our customer support team for further order details on Dual N-Channel MOSFET Transistor & Diode, 42 A, 55 V, 3-Pin DPAK Infineon IRFR1010ZTRPBF.
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Yes. We ship IRFR1010ZTRPBF Internationally to many countries around the world.
This is Dual N-Channel MOSFET Transistor & Diode 42 A 55 V 3-Pin DPAK manufactured by Infineon. The manufacturer part number is IRFR1010ZTRPBF. It has a maximum of 55 v drain source voltage. The product is available in surface mount configuration. The product carries enhancement channel mode. The product hexfet, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The product carries 20v of maximum gate threshold voltage. It provides up to 0.0075 o maximum drain source resistance. The package is a sort of dpak (to-252). It consists of 2 elements per chip. While 42 a of maximum continuous drain current. It contains 3 pins.
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