Dual N-Channel MOSFET Transistor & Diode, 363 A, 60 V, 7-Pin PG-TO263-7 Infineon IRF60SC241ARMA1
Product Information
Maximum Drain Source Voltage:
60 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Series:
StrongIRFET
Channel Type:
N
Maximum Gate Threshold Voltage:
3.7V
Maximum Drain Source Resistance:
0.00095 O
Package Type:
TO-263-7
Number of Elements per Chip:
1
Maximum Continuous Drain Current:
363 A
Pin Count:
7
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Yes. Our products in MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Dual N-Channel MOSFET Transistor & Diode, 363 A, 60 V, 7-Pin PG-TO263-7 Infineon IRF60SC241ARMA1. You can also check on our website or by contacting our customer support team for further order details on Dual N-Channel MOSFET Transistor & Diode, 363 A, 60 V, 7-Pin PG-TO263-7 Infineon IRF60SC241ARMA1.
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Yes. We ship IRF60SC241ARMA1 Internationally to many countries around the world.
This is Dual N-Channel MOSFET Transistor & Diode 363 A 60 V 7-Pin PG-TO263-7 manufactured by Infineon. The manufacturer part number is IRF60SC241ARMA1. It has a maximum of 60 v drain source voltage. The product is available in surface mount configuration. The product carries enhancement channel mode. The product strongirfet, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The product carries 3.7v of maximum gate threshold voltage. It provides up to 0.00095 o maximum drain source resistance. The package is a sort of to-263-7. It consists of 1 elements per chip. While 363 a of maximum continuous drain current. It contains 7 pins.
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