Quad N-Channel MOSFET Transistor & Diode, 16 A, 650 V, 3-Pin PG-SOT223 Infineon IPN60R600P7SATMA1

Infineon

Product Information

Automotive Standard:
No
Maximum Power Dissipation Pd:
7W
Product Type:
MOSFET & Diode
Maximum Drain Source Voltage Vds:
650V
Channel Mode:
Enhancement
Typical Gate Charge Qg @ Vgs:
9nC
Series:
CoolMOS P7
Maximum Gate Source Voltage Vgs:
20 V
Forward Voltage Vf:
0.9V
Height:
1.8mm
Width:
3.7 mm
Length:
6.7mm
Package Type:
SOT-223
Standards/Approvals:
No
Maximum Continuous Drain Current Id:
16A
Channel Type:
Type N
Maximum Drain Source Resistance Rds:
600mΩ
Pin Count:
3
Mount Type:
Surface
RoHs Compliant
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This is Quad N-Channel MOSFET Transistor & Diode 16 A 650 V 3-Pin PG-SOT223 manufactured by Infineon. The manufacturer part number is IPN60R600P7SATMA1. The product complies with automotive standard - no. mosfet & diode is a versatile product designed to provide user-defined applications. The product carries enhancement channel mode. The product coolmos p7, is a highly preferred choice for users. In addition, the height is 1.8mm. Furthermore, the product is 3.7 mm wide. Its accurate length is 6.7mm. The package is a sort of sot-223. The product is available in [Cannel Type] channel. It contains 3 pins. It has a surface type mount .

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Datasheet - IPN60R600P7SATMA1(Technical Reference)

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