N-Channel MOSFET, 180 A, 40 V, 7-Pin D2PAK Infineon IPB180N04S4H0ATMA1
Product Information
Maximum Drain Source Voltage:
40 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Series:
OptiMOS™-T2
Channel Type:
N
Maximum Gate Threshold Voltage:
4V
Maximum Drain Source Resistance:
0.0011 Ω
Package Type:
D2PAK-7
Number of Elements per Chip:
1
Maximum Continuous Drain Current:
180 A
Transistor Material:
Si
Pin Count:
7
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Yes. Our products in MOSFETs category are shipped in lowest possible time.
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Yes. We ship IPB180N04S4H0ATMA1 Internationally to many countries around the world.
This is N-Channel MOSFET 180 A 40 V 7-Pin D2PAK manufactured by Infineon. The manufacturer part number is IPB180N04S4H0ATMA1. It has a maximum of 40 v drain source voltage. The product is available in surface mount configuration. The product carries enhancement channel mode. The product optimos™-t2, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The product carries 4v of maximum gate threshold voltage. It provides up to 0.0011 ω maximum drain source resistance. The package is a sort of d2pak-7. It consists of 1 elements per chip. While 180 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. It contains 7 pins.
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