N-Channel MOSFET, 260 A, 100 V, 8-Pin HSOF-8 Infineon IAUT260N10S5N019ATMA1
Product Information
Maximum Drain Source Voltage:
100 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Series:
OptiMOS™-5
Channel Type:
N
Maximum Gate Threshold Voltage:
3.8V
Maximum Drain Source Resistance:
0.0019 Ω
Package Type:
HSOF-8
Number of Elements per Chip:
1
Maximum Continuous Drain Current:
260 A
Transistor Material:
Si
Pin Count:
8
Checking for live stock
FAQs
Yes. You can also search IAUT260N10S5N019ATMA1 on website for other similar products.
We accept all major payment methods for all products including ET21617574. Please check your shopping cart at the time of order.
You can order Infineon brand products with IAUT260N10S5N019ATMA1 directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of N-Channel MOSFET, 260 A, 100 V, 8-Pin HSOF-8 Infineon IAUT260N10S5N019ATMA1. You can also check on our website or by contacting our customer support team for further order details on N-Channel MOSFET, 260 A, 100 V, 8-Pin HSOF-8 Infineon IAUT260N10S5N019ATMA1.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET21617574 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "Infineon" products on our website by using Enrgtech's Unique Manufacturing Part Number ET21617574.
Yes. We ship IAUT260N10S5N019ATMA1 Internationally to many countries around the world.
This is N-Channel MOSFET 260 A 100 V 8-Pin HSOF-8 manufactured by Infineon. The manufacturer part number is IAUT260N10S5N019ATMA1. It has a maximum of 100 v drain source voltage. The product is available in surface mount configuration. The product carries enhancement channel mode. The product optimos™-5, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The product carries 3.8v of maximum gate threshold voltage. It provides up to 0.0019 ω maximum drain source resistance. The package is a sort of hsof-8. It consists of 1 elements per chip. While 260 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. It contains 8 pins.
Reviews
Don’t hesitate to ask questions for better clarification.