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United Kingdom
The Infineon IPD33CN10NGATMA1 is a high-performance N‑Channel MOSFET from the OptiMOS™ 2 family, designed for mid-power switching in UK electronics. Packaged in a surface-mount DPAK (TO‑252‑3), it supports up to 100 V drain-source voltage, 27 A continuous current, and dissipates up to 58 W under proper cooling. Featuring very low on-resistance of 33 mΩ at 10 V gate drive and fast switching characteristics (rise time ~21 ns, fall time ~4 ns), it’s ideal for efficient power regulation, converters, and motor control.
The IPD33CN10NGATMA1 is a blend of efficiency, robustness, and performance. The compact DPAK package simplifies PCB layout while managing high currents and dissipation. Its broad operating temperature range and high power handling provide rugged reliability, key for UK applications in industrial, automotive, and renewable energy systems where thermal endurance and consistent performance are essential.
For more information please check the datasheets.
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