onsemi NTP110N65S3HF
Product Information
Maximum Drain Source Voltage:
650 V
Typical Gate Charge @ Vgs:
62 nC @ 10 V
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Maximum Power Dissipation:
240 W
Maximum Gate Source Voltage:
±30 V
Maximum Gate Threshold Voltage:
5V
Channel Type:
N
Width:
4.7mm
Length:
10.67mm
Maximum Drain Source Resistance:
110 mΩ
Package Type:
TO-220
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
30 A
Minimum Gate Threshold Voltage:
3V
Forward Diode Voltage:
1.3V
Height:
16.3mm
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
5V @ 740µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-220-3
Rds On (Max) @ Id, Vgs:
110mOhm @ 15A, 10V
edacadModel:
NTP110N65S3HF Models
Gate Charge (Qg) (Max) @ Vgs:
62 nC @ 10 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
edacadModelUrl:
/en/models/9829148
Package:
Bulk
Drain to Source Voltage (Vdss):
650 V
Vgs (Max):
±30V
Moisture Sensitivity Level (MSL):
Not Applicable
Power Dissipation (Max):
240W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
2635 pF @ 400 V
Mounting Type:
Through Hole
Series:
FRFET®, SuperFET® III
Supplier Device Package:
TO-220-3
Current - Continuous Drain (Id) @ 25°C:
30A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
NTP110
ECCN:
EAR99
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Yes. We ship NTP110N65S3HF Internationally to many countries around the world.
This is manufactured by onsemi. The manufacturer part number is NTP110N65S3HF. It has a maximum of 650 v drain source voltage. With a typical gate charge at Vgs includes 62 nc @ 10 v. The product is available in through hole configuration. The product carries enhancement channel mode. Provides up to 240 w maximum power dissipation. It features a maximum gate source voltage of ±30 v. The product carries 5v of maximum gate threshold voltage. The product is available in [Cannel Type] channel. Furthermore, the product is 4.7mm wide. Its accurate length is 10.67mm. It provides up to 110 mω maximum drain source resistance. The package is a sort of to-220. It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 30 a of maximum continuous drain current. Whereas its minimum gate threshold voltage includes 3v. Its forward diode voltage is 1.3v . In addition, the height is 16.3mm. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 5v @ 740µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-220-3. It has a maximum Rds On and voltage of 110mohm @ 15a, 10v. The maximum gate charge and given voltages include 62 nc @ 10 v. The product is rohs3 compliant. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. It is shipped in bulk package . The product has a 650 v drain to source voltage. The maximum Vgs rate is ±30v. Its typical moisture sensitivity level is not applicable. The product carries maximum power dissipation 240w (tc). The product's input capacitance at maximum includes 2635 pf @ 400 v. The product frfet®, superfet® iii, is a highly preferred choice for users. to-220-3 is the supplier device package value. The continuous current drain at 25°C is 30a (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to ntp110, a base product number of the product. The product is designated with the ear99 code number.
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