Automotive Standard:
AEC-Q101
Maximum Power Dissipation Pd:
68W
Product Type:
MOSFET
Maximum Drain Source Voltage Vds:
80V
Channel Mode:
Enhancement
Typical Gate Charge Qg @ Vgs:
13nC
Series:
NVTFS6H854N
Maximum Gate Source Voltage Vgs:
20 V
Height:
0.75mm
Width:
3.15 mm
Length:
3.15mm
Package Type:
WDFN
Minimum Operating Temperature:
-55°C
Maximum Drain Source Resistance Rds:
14.5mΩ
Standards/Approvals:
No
Maximum Continuous Drain Current Id:
44A
Channel Type:
Type N
Maximum Operating Temperature:
175°C
Pin Count:
8
Mount Type:
Surface
FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
8-PowerWDFN
Rds On (Max) @ Id, Vgs:
14.5mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs:
13 nC @ 10 V
Vgs(th) (Max) @ Id:
4V @ 45µA
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Drain to Source Voltage (Vdss):
80 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
3.2W (Ta), 68W (Tc)
Qualification:
AEC-Q101
standardLeadTime:
19 Weeks
Input Capacitance (Ciss) (Max) @ Vds:
770 pF @ 40 V
Mounting Type:
Surface Mount
Grade:
Automotive
Series:
-
Supplier Device Package:
8-WDFN (3.3x3.3)
Packaging:
Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C:
9.5A (Ta), 44A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
NVTFS6
ECCN:
EAR99
