Maximum Drain Source Voltage:
100 V
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Maximum Power Dissipation:
60 W
Maximum Gate Source Voltage:
-10 V, +10 V
Height:
9.4mm
Width:
4.83mm
Length:
10.67mm
Minimum Gate Threshold Voltage:
1V
Package Type:
TO-220AB
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
12 A
Transistor Material:
Si
Maximum Drain Source Resistance:
200 mΩ
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
2V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-220-3
Rds On (Max) @ Id, Vgs:
200mOhm @ 12A, 5V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
edacadModel:
RFP12N10L Models
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
5V
edacadModelUrl:
/en/models/458764
Package:
Tube
Drain to Source Voltage (Vdss):
100 V
Vgs (Max):
±10V
Moisture Sensitivity Level (MSL):
Not Applicable
Power Dissipation (Max):
60W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
900 pF @ 25 V
standardLeadTime:
6 Weeks
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-220-3
Current - Continuous Drain (Id) @ 25°C:
12A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
RFP12N10
ECCN:
EAR99
