onsemi RFP12N10L
Product Information
Maximum Drain Source Voltage:
100 V
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Maximum Power Dissipation:
60 W
Maximum Gate Source Voltage:
-10 V, +10 V
Height:
9.4mm
Width:
4.83mm
Length:
10.67mm
Minimum Gate Threshold Voltage:
1V
Package Type:
TO-220AB
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
12 A
Transistor Material:
Si
Maximum Drain Source Resistance:
200 mΩ
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
2V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-220-3
Rds On (Max) @ Id, Vgs:
200mOhm @ 12A, 5V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
edacadModel:
RFP12N10L Models
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
5V
edacadModelUrl:
/en/models/458764
Package:
Tube
Drain to Source Voltage (Vdss):
100 V
Vgs (Max):
±10V
Moisture Sensitivity Level (MSL):
Not Applicable
Power Dissipation (Max):
60W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
900 pF @ 25 V
standardLeadTime:
6 Weeks
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-220-3
Current - Continuous Drain (Id) @ 25°C:
12A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
RFP12N10
ECCN:
EAR99
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FAQs
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You can order onsemi brand products with RFP12N10L directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of onsemi RFP12N10L. You can also check on our website or by contacting our customer support team for further order details on onsemi RFP12N10L.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET21548298 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "onsemi" products on our website by using Enrgtech's Unique Manufacturing Part Number ET21548298.
Yes. We ship RFP12N10L Internationally to many countries around the world.
This is manufactured by onsemi. The manufacturer part number is RFP12N10L. It has a maximum of 100 v drain source voltage. The product is available in through hole configuration. The product carries enhancement channel mode. Provides up to 60 w maximum power dissipation. It features a maximum gate source voltage of -10 v, +10 v. In addition, the height is 9.4mm. Furthermore, the product is 4.83mm wide. Its accurate length is 10.67mm. Whereas its minimum gate threshold voltage includes 1v. The package is a sort of to-220ab. It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 12 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. It provides up to 200 mω maximum drain source resistance. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 2v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-220-3. It has a maximum Rds On and voltage of 200mohm @ 12a, 5v. The product is rohs3 compliant. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 5v. It is shipped in tube package . The product has a 100 v drain to source voltage. The maximum Vgs rate is ±10v. Its typical moisture sensitivity level is not applicable. The product carries maximum power dissipation 60w (tc). The product's input capacitance at maximum includes 900 pf @ 25 v. It has a long 6 weeks standard lead time. to-220-3 is the supplier device package value. The continuous current drain at 25°C is 12a (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to rfp12n10, a base product number of the product. The product is designated with the ear99 code number.
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