onsemi NTMTS001N06CLTXG
Product Information
Maximum Drain Source Voltage:
60 V
Typical Gate Charge @ Vgs:
165 nC @ 10 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
5 W
Maximum Gate Source Voltage:
±20 V
Maximum Gate Threshold Voltage:
2.2V
Channel Type:
N
Width:
8mm
Length:
8.1mm
Maximum Drain Source Resistance:
1.05 mΩ
Package Type:
DFNW8
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
398.2 A
Minimum Gate Threshold Voltage:
1.2V
Forward Diode Voltage:
1.2V
Height:
1.15mm
Maximum Operating Temperature:
+175 °C
Pin Count:
8
Transistor Configuration:
Single
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
2.2V @ 250µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
8-PowerTDFN
Rds On (Max) @ Id, Vgs:
0.81mOhm @ 50A, 10V
Gate Charge (Qg) (Max) @ Vgs:
165 nC @ 10 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
60 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
5W
Input Capacitance (Ciss) (Max) @ Vds:
12300 pF @ 25 V
standardLeadTime:
8 Weeks
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
8-DFNW (8.3x8.4)
Current - Continuous Drain (Id) @ 25°C:
398.2A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
NTMTS001
ECCN:
EAR99
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We use our internationally recognized delivery partners UPS/DHL. Collection of ET21546622 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "onsemi" products on our website by using Enrgtech's Unique Manufacturing Part Number ET21546622.
Yes. We ship NTMTS001N06CLTXG Internationally to many countries around the world.
This is manufactured by onsemi. The manufacturer part number is NTMTS001N06CLTXG. It has a maximum of 60 v drain source voltage. With a typical gate charge at Vgs includes 165 nc @ 10 v. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 5 w maximum power dissipation. It features a maximum gate source voltage of ±20 v. The product carries 2.2v of maximum gate threshold voltage. The product is available in [Cannel Type] channel. Furthermore, the product is 8mm wide. Its accurate length is 8.1mm. It provides up to 1.05 mω maximum drain source resistance. The package is a sort of dfnw8. It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 398.2 a of maximum continuous drain current. Whereas its minimum gate threshold voltage includes 1.2v. Its forward diode voltage is 1.2v . In addition, the height is 1.15mm. It has a maximum operating temperature of +175 °c. It contains 8 pins. The product offers single transistor configuration. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 2.2v @ 250µa. The product has -55°c ~ 175°c (tj) operating temperature range. Moreover, the product comes in 8-powertdfn. It has a maximum Rds On and voltage of 0.81mohm @ 50a, 10v. The maximum gate charge and given voltages include 165 nc @ 10 v. The product is rohs3 compliant. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 4.5v, 10v. It is shipped in tape & reel (tr) package . The product has a 60 v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 5w. The product's input capacitance at maximum includes 12300 pf @ 25 v. It has a long 8 weeks standard lead time. 8-dfnw (8.3x8.4) is the supplier device package value. The continuous current drain at 25°C is 398.2a (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to ntmts001, a base product number of the product. The product is designated with the ear99 code number.
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