Maximum Drain Source Voltage:
650 V
Typical Gate Charge @ Vgs:
49 nC @ 10 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
181 W
Maximum Gate Source Voltage:
±30 V
Maximum Gate Threshold Voltage:
4.5V
Channel Type:
N
Width:
8mm
Length:
8mm
Maximum Drain Source Resistance:
125 mΩ
Package Type:
PQFN4
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
24 A
Minimum Gate Threshold Voltage:
2.5V
Forward Diode Voltage:
1.2V
Height:
1.05mm
Maximum Operating Temperature:
+150 °C
Pin Count:
4
Transistor Configuration:
Single
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
4.5V @ 590µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
4-PowerTSFN
Rds On (Max) @ Id, Vgs:
125mOhm @ 12A, 10V
edacadModel:
FCMT125N65S3 Models
Gate Charge (Qg) (Max) @ Vgs:
49 nC @ 10 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
edacadModelUrl:
/en/models/9764705
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
650 V
Vgs (Max):
±30V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
181W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
1920 pF @ 400 V
Mounting Type:
Surface Mount
Series:
SuperFET® III
Supplier Device Package:
4-PQFN (8x8)
Current - Continuous Drain (Id) @ 25°C:
24A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
FCMT125
ECCN:
EAR99
This is manufactured by onsemi. The manufacturer part number is FCMT125N65S3. It has a maximum of 650 v drain source voltage. With a typical gate charge at Vgs includes 49 nc @ 10 v. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 181 w maximum power dissipation. It features a maximum gate source voltage of ±30 v. The product carries 4.5v of maximum gate threshold voltage. The product is available in [Cannel Type] channel. Furthermore, the product is 8mm wide. Its accurate length is 8mm. It provides up to 125 mω maximum drain source resistance. The package is a sort of pqfn4. It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 24 a of maximum continuous drain current. Whereas its minimum gate threshold voltage includes 2.5v. Its forward diode voltage is 1.2v . In addition, the height is 1.05mm. It has a maximum operating temperature of +150 °c. It contains 4 pins. The product offers single transistor configuration. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 4.5v @ 590µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in 4-powertsfn. It has a maximum Rds On and voltage of 125mohm @ 12a, 10v. The maximum gate charge and given voltages include 49 nc @ 10 v. The product is rohs3 compliant. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. It is shipped in tape & reel (tr) package . The product has a 650 v drain to source voltage. The maximum Vgs rate is ±30v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 181w (tc). The product's input capacitance at maximum includes 1920 pf @ 400 v. The product superfet® iii, is a highly preferred choice for users. 4-pqfn (8x8) is the supplier device package value. The continuous current drain at 25°C is 24a (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to fcmt125, a base product number of the product. The product is designated with the ear99 code number.
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