Maximum Drain Source Voltage:
12 V
Typical Gate Charge @ Vgs:
14 nC @ 4.5 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
2.1 W
Series:
PowerTrench
Maximum Gate Source Voltage:
-8 V, +8 V
Height:
0.5mm
Width:
1.6mm
Length:
1.6mm
Minimum Gate Threshold Voltage:
0.4V
Package Type:
MicroFET 2 x 2
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
8 A
Transistor Material:
Si
Maximum Drain Source Resistance:
97 mΩ
Channel Type:
P
Maximum Operating Temperature:
+150 °C
Pin Count:
6
Transistor Configuration:
Single
FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
6-PowerUFDFN
Rds On (Max) @ Id, Vgs:
22mOhm @ 8A, 4.5V
title:
FDME905PT
Vgs(th) (Max) @ Id:
1V @ 250µA
REACH Status:
REACH Unaffected
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
1.8V, 4.5V
Drain to Source Voltage (Vdss):
12 V
Vgs (Max):
±8V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
2.1W (Ta)
standardLeadTime:
15 Weeks
Input Capacitance (Ciss) (Max) @ Vds:
2315 pF @ 6 V
Mounting Type:
Surface Mount
Series:
PowerTrench®
Gate Charge (Qg) (Max) @ Vgs:
20 nC @ 4.5 V
Supplier Device Package:
MicroFet 1.6x1.6 Thin
Packaging:
Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C:
8A (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
FDME905
ECCN:
EAR99
