Forward Voltage Vf:
0.7V
Width:
1.6 mm
Maximum Drain Source Resistance Rds:
160mΩ
Automotive Standard:
No
Transistor Configuration:
Isolated
Typical Gate Charge Qg @ Vgs:
3nC
Package Type:
MicroFET
Number of Elements per Chip:
2
Maximum Continuous Drain Current Id:
3.8A
Product Type:
MOSFET
Maximum Operating Temperature:
150°C
Maximum Drain Source Voltage Vds:
20V
Channel Type:
Type N
Length:
1.6mm
Standards/Approvals:
No
Pin Count:
6
Mount Type:
Surface
Maximum Power Dissipation Pd:
1.4W
Channel Mode:
Enhancement
Maximum Gate Source Voltage Vgs:
8 V
Series:
PowerTrench
Height:
0.5mm
Minimum Operating Temperature:
-55°C
FET Feature:
Logic Level Gate
HTSUS:
8541.21.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
6-UFDFN Exposed Pad
Rds On (Max) @ Id, Vgs:
66mOhm @ 3.4A, 4.5V
Gate Charge (Qg) (Max) @ Vgs:
4.2nC @ 4.5V
Vgs(th) (Max) @ Id:
1V @ 250µA
REACH Status:
REACH Unaffected
Current - Continuous Drain (Id) @ 25°C:
3.8A
Configuration:
2 N-Channel (Dual)
Manufacturer:
onsemi
Drain to Source Voltage (Vdss):
20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
standardLeadTime:
16 Weeks
Input Capacitance (Ciss) (Max) @ Vds:
300pF @ 10V
Mounting Type:
Surface Mount
Series:
PowerTrench®
Supplier Device Package:
6-MicroFET (1.6x1.6)
Packaging:
Tape & Reel (TR)
Power - Max:
600mW
Technology:
MOSFET (Metal Oxide)
Base Product Number:
FDME1024
ECCN:
EAR99
