Automotive Standard:
No
Maximum Power Dissipation Pd:
3W
Product Type:
MOSFET
Maximum Drain Source Voltage Vds:
30V
Channel Mode:
Enhancement
Typical Gate Charge Qg @ Vgs:
15nC
Maximum Drain Source Resistance Rds:
0.072Ω
Maximum Gate Source Voltage Vgs:
±8 V
Forward Voltage Vf:
1.2V
Height:
1.6mm
Width:
3.56 mm
Length:
6.5mm
Package Type:
SOT-223
Minimum Operating Temperature:
-55°C
Standards/Approvals:
No
Maximum Continuous Drain Current Id:
6.3A
Channel Type:
Type N
Maximum Operating Temperature:
150°C
Pin Count:
3
Mount Type:
Surface
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
1V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-261-4, TO-261AA
Rds On (Max) @ Id, Vgs:
45mOhm @ 6.3A, 4.5V
Gate Charge (Qg) (Max) @ Vgs:
15 nC @ 4.5 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
edacadModel:
FDT439N Models
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
2.5V, 4.5V
edacadModelUrl:
/en/models/976594
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
30 V
Vgs (Max):
±8V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
3W (Ta)
Input Capacitance (Ciss) (Max) @ Vds:
500 pF @ 15 V
standardLeadTime:
27 Weeks
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
SOT-223-4
Current - Continuous Drain (Id) @ 25°C:
6.3A (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
FDT439
ECCN:
EAR99
