N-Channel MOSFET, 6.9 A, 500 V, 3-Pin DPAK onsemi FDD8N50NZTM
Product Information
Maximum Continuous Drain Current:
6.9 A
Transistor Material:
Si
Width:
6.22mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
500 V
Package Type:
DPAK (TO-252)
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
3V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
14 nC @ 25 V
Channel Type:
N
Length:
6.73mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
90 W
Series:
UniFET
Maximum Gate Source Voltage:
-25 V, +25 V
Height:
2.39mm
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
850 mΩ
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
5V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Rds On (Max) @ Id, Vgs:
850mOhm @ 3.25A, 10V
Gate Charge (Qg) (Max) @ Vgs:
18 nC @ 10 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
500 V
Vgs (Max):
±25V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
90W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
735 pF @ 25 V
Mounting Type:
Surface Mount
Series:
UniFET-II™
Supplier Device Package:
TO-252AA
Current - Continuous Drain (Id) @ 25°C:
6.5A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
FDD8N50
ECCN:
EAR99
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FAQs
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You can order onsemi brand products with FDD8N50NZTM directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of N-Channel MOSFET, 6.9 A, 500 V, 3-Pin DPAK onsemi FDD8N50NZTM. You can also check on our website or by contacting our customer support team for further order details on N-Channel MOSFET, 6.9 A, 500 V, 3-Pin DPAK onsemi FDD8N50NZTM.
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Yes. We ship FDD8N50NZTM Internationally to many countries around the world.
This is N-Channel MOSFET 6.9 A 500 V 3-Pin DPAK manufactured by onsemi. The manufacturer part number is FDD8N50NZTM. While 6.9 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 6.22mm wide. The product offers single transistor configuration. It has a maximum of 500 v drain source voltage. The package is a sort of dpak (to-252). It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 3v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 14 nc @ 25 v. The product is available in [Cannel Type] channel. Its accurate length is 6.73mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 90 w maximum power dissipation. The product unifet, is a highly preferred choice for users. It features a maximum gate source voltage of -25 v, +25 v. In addition, the height is 2.39mm. Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 850 mω maximum drain source resistance. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 5v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-252-3, dpak (2 leads + tab), sc-63. It has a maximum Rds On and voltage of 850mohm @ 3.25a, 10v. The maximum gate charge and given voltages include 18 nc @ 10 v. The product is rohs3 compliant. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. It is shipped in tape & reel (tr) package . The product has a 500 v drain to source voltage. The maximum Vgs rate is ±25v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 90w (tc). The product's input capacitance at maximum includes 735 pf @ 25 v. The product unifet-ii™, is a highly preferred choice for users. to-252aa is the supplier device package value. The continuous current drain at 25°C is 6.5a (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to fdd8n50, a base product number of the product. The product is designated with the ear99 code number.
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