N-Channel MOSFET, 5.6 A, 100 V, 3 + Tab-Pin SOT-223 onsemi FDT1600N10ALZ

FDT1600N10ALZ N-Channel MOSFET, 5.6 A, 100 V, 3 + Tab-Pin SOT-223 onsemi
FDT1600N10ALZ
onsemi

Product Information

Maximum Continuous Drain Current:
5.6 A
Transistor Material:
Si
Width:
3.7mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
100 V
Package Type:
SOT-223
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
1.4V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
2.9 nC @ 10 V
Channel Type:
N
Length:
6.7mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
10.42 W
Series:
PowerTrench
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
1.7mm
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
375 mΩ
FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-261-4, TO-261AA
Rds On (Max) @ Id, Vgs:
160mOhm @ 2.8A, 10V
Gate Charge (Qg) (Max) @ Vgs:
3.77 nC @ 10 V
Vgs(th) (Max) @ Id:
2.8V @ 250µA
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
5V, 10V
Drain to Source Voltage (Vdss):
100 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
10.42W (Tc)
standardLeadTime:
20 Weeks
Input Capacitance (Ciss) (Max) @ Vds:
225 pF @ 50 V
Mounting Type:
Surface Mount
Series:
PowerTrench®
Supplier Device Package:
SOT-223-4
Packaging:
Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C:
5.6A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
FDT1600
ECCN:
EAR99
RoHs Compliant
Checking for live stock

This is N-Channel MOSFET 5.6 A 100 V 3 + Tab-Pin SOT-223 manufactured by onsemi. The manufacturer part number is FDT1600N10ALZ. While 5.6 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 3.7mm wide. The product offers single transistor configuration. It has a maximum of 100 v drain source voltage. The package is a sort of sot-223. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 1.4v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 2.9 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 6.7mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 10.42 w maximum power dissipation. The product powertrench, is a highly preferred choice for users. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 1.7mm. Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 375 mω maximum drain source resistance. It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs3 compliant. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-261-4, to-261aa. It has a maximum Rds On and voltage of 160mohm @ 2.8a, 10v. The maximum gate charge and given voltages include 3.77 nc @ 10 v. The typical Vgs (th) (max) of the product is 2.8v @ 250µa. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 5v, 10v. The product has a 100 v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 10.42w (tc). It has a long 20 weeks standard lead time. The product's input capacitance at maximum includes 225 pf @ 50 v. The product powertrench®, is a highly preferred choice for users. sot-223-4 is the supplier device package value. In addition, tape & reel (tr) is the available packaging type of the product. The continuous current drain at 25°C is 5.6a (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to fdt1600, a base product number of the product. The product is designated with the ear99 code number.

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FDT1600N10ALZ, N-Channel PowerTrench MOSFET 100V, 5.6A, 160mOhm(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)
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onsemi RoHS(Environmental Information)
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onsemi REACH(Environmental Information)
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Mult Dev Assembly Chg 21/May/2020(PCN Assembly/Origin)
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Marking Lay-out Implementation 07/Oct/2022(PCN Design/Specification)
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Marking Lay-out Implementation 15/Nov/2021(PCN Design/Specification)
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FDT1600N10ALZ(Datasheets)
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Mult Devices 24/Oct/2017(PCN Packaging)

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