Maximum Drain Source Voltage:
30 V
Typical Gate Charge @ Vgs:
28 nC @ 10 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
1.3 W
Maximum Gate Source Voltage:
-20 V, +20 V
Maximum Gate Threshold Voltage:
2.5V
Height:
1.5mm
Width:
4mm
Length:
5mm
Maximum Drain Source Resistance:
9 mΩ
Package Type:
SOIC
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
11.6 A
Transistor Material:
Si
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
8
Transistor Configuration:
Single
FET Feature:
-
HTSUS:
8541.21.0095
Vgs(th) (Max) @ Id:
2.5V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-SOIC (0.154", 3.90mm Width)
Rds On (Max) @ Id, Vgs:
9mOhm @ 12A, 10V
edacadModel:
NTMS4916NR2G Models
Gate Charge (Qg) (Max) @ Vgs:
15 nC @ 4.5 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
edacadModelUrl:
/en/models/2683876
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
30 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
890mW (Ta)
Input Capacitance (Ciss) (Max) @ Vds:
1376 pF @ 25 V
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
8-SOIC
Current - Continuous Drain (Id) @ 25°C:
7.8A (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
NTMS4916
ECCN:
EAR99
This is N-Channel MOSFET 11.6 A 30 V 8-Pin SOIC ON Semiconductor manufactured by onsemi. The manufacturer part number is NTMS4916NR2G. It has a maximum of 30 v drain source voltage. With a typical gate charge at Vgs includes 28 nc @ 10 v. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 1.3 w maximum power dissipation. It features a maximum gate source voltage of -20 v, +20 v. The product carries 2.5v of maximum gate threshold voltage. In addition, the height is 1.5mm. Furthermore, the product is 4mm wide. Its accurate length is 5mm. It provides up to 9 mω maximum drain source resistance. The package is a sort of soic. It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 11.6 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 8 pins. The product offers single transistor configuration. It is assigned with possible HTSUS value of 8541.21.0095. The typical Vgs (th) (max) of the product is 2.5v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in 8-soic (0.154", 3.90mm width). It has a maximum Rds On and voltage of 9mohm @ 12a, 10v. The maximum gate charge and given voltages include 15 nc @ 4.5 v. The product is rohs3 compliant. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 4.5v, 10v. It is shipped in tape & reel (tr) package . The product has a 30 v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 890mw (ta). The product's input capacitance at maximum includes 1376 pf @ 25 v. 8-soic is the supplier device package value. The continuous current drain at 25°C is 7.8a (ta). This product use mosfet (metal oxide) technology. Moreover, it corresponds to ntms4916, a base product number of the product. The product is designated with the ear99 code number.
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