Forward Voltage Vf:
-0.9V
Width:
1.3 mm
Automotive Standard:
No
Typical Gate Charge Qg @ Vgs:
5.6nC
Package Type:
SOT-563
Maximum Continuous Drain Current Id:
950mA
Product Type:
MOSFET
Maximum Drain Source Resistance Rds:
240mΩ
Maximum Operating Temperature:
150°C
Maximum Drain Source Voltage Vds:
20V
Channel Type:
Type P
Length:
1.7mm
Standards/Approvals:
No
Pin Count:
6
Mount Type:
Surface
Maximum Power Dissipation Pd:
210mW
Channel Mode:
Enhancement
Maximum Gate Source Voltage Vgs:
8 V
Series:
NTZS3151P
Height:
0.6mm
Minimum Operating Temperature:
-55°C
FET Feature:
-
HTSUS:
8541.21.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
SOT-563, SOT-666
Rds On (Max) @ Id, Vgs:
150mOhm @ 950mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs:
5.6 nC @ 4.5 V
Vgs(th) (Max) @ Id:
1V @ 250µA
REACH Status:
REACH Unaffected
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
1.8V, 4.5V
Drain to Source Voltage (Vdss):
20 V
Vgs (Max):
±8V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
170mW (Ta)
standardLeadTime:
18 Weeks
Input Capacitance (Ciss) (Max) @ Vds:
458 pF @ 16 V
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
SOT-563
Packaging:
Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C:
860mA (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
NTZS3151
ECCN:
EAR99