Maximum Drain Source Voltage:
20 V
Typical Gate Charge @ Vgs:
5.6 nC @ 4.5 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
210 mW
Maximum Gate Source Voltage:
-8 V, +8 V
Maximum Gate Threshold Voltage:
1V
Height:
0.6mm
Width:
1.3mm
Length:
1.7mm
Maximum Drain Source Resistance:
240 mΩ
Package Type:
SOT-563
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
950 mA
Transistor Material:
Si
Channel Type:
P
Maximum Operating Temperature:
+150 °C
Pin Count:
6
Transistor Configuration:
Single
FET Feature:
-
HTSUS:
8541.21.0095
Vgs(th) (Max) @ Id:
1V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
SOT-563, SOT-666
Rds On (Max) @ Id, Vgs:
150mOhm @ 950mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs:
5.6 nC @ 4.5 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
1.8V, 4.5V
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
20 V
Vgs (Max):
±8V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
170mW (Ta)
Input Capacitance (Ciss) (Max) @ Vds:
458 pF @ 16 V
standardLeadTime:
11 Weeks
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
SOT-563
Current - Continuous Drain (Id) @ 25°C:
860mA (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
NTZS3151
ECCN:
EAR99
This is P-Channel MOSFET 950 mA 20 V 6-Pin SOT-563 ON Semiconductor manufactured by onsemi. The manufacturer part number is NTZS3151PT1G. It has a maximum of 20 v drain source voltage. With a typical gate charge at Vgs includes 5.6 nc @ 4.5 v. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 210 mw maximum power dissipation. It features a maximum gate source voltage of -8 v, +8 v. The product carries 1v of maximum gate threshold voltage. In addition, the height is 0.6mm. Furthermore, the product is 1.3mm wide. Its accurate length is 1.7mm. It provides up to 240 mω maximum drain source resistance. The package is a sort of sot-563. It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 950 ma of maximum continuous drain current. The transistor is manufactured from highly durable si material. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 6 pins. The product offers single transistor configuration. It is assigned with possible HTSUS value of 8541.21.0095. The typical Vgs (th) (max) of the product is 1v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in sot-563, sot-666. It has a maximum Rds On and voltage of 150mohm @ 950ma, 4.5v. The maximum gate charge and given voltages include 5.6 nc @ 4.5 v. The product is rohs3 compliant. In addition, it is reach unaffected. It carries FET type p-channel. The drive voltage (maximum and minimum Rds On) of the product includes 1.8v, 4.5v. It is shipped in tape & reel (tr) package . The product has a 20 v drain to source voltage. The maximum Vgs rate is ±8v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 170mw (ta). The product's input capacitance at maximum includes 458 pf @ 16 v. It has a long 11 weeks standard lead time. sot-563 is the supplier device package value. The continuous current drain at 25°C is 860ma (ta). This product use mosfet (metal oxide) technology. Moreover, it corresponds to ntzs3151, a base product number of the product. The product is designated with the ear99 code number.
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