P-Channel MOSFET, 1 A, 20 V, 3-Pin SOT-23 ON Semiconductor NVR1P02T1G
Product Information
Maximum Drain Source Voltage:
20 V
Typical Gate Charge @ Vgs:
2.5 nC @ 5 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
400 mW
Maximum Gate Source Voltage:
-20 V, +20 V
Maximum Gate Threshold Voltage:
2.3V
Height:
1.01mm
Width:
1.4mm
Length:
3.04mm
Maximum Drain Source Resistance:
180 mΩ
Package Type:
SOT-23
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
1 A
Transistor Material:
Si
Channel Type:
P
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
FET Feature:
-
HTSUS:
8541.21.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-236-3, SC-59, SOT-23-3
Rds On (Max) @ Id, Vgs:
180mOhm @ 1.5A, 10V
Gate Charge (Qg) (Max) @ Vgs:
2.5 nC @ 5 V
Vgs(th) (Max) @ Id:
2.3V @ 250µA
REACH Status:
REACH Unaffected
edacadModel:
NVR1P02T1G Models
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
edacadModelUrl:
/en/models/3062553
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
20 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
400mW (Ta)
Input Capacitance (Ciss) (Max) @ Vds:
165 pF @ 5 V
Qualification:
AEC-Q101
standardLeadTime:
6 Weeks
Mounting Type:
Surface Mount
Grade:
Automotive
Series:
-
Supplier Device Package:
SOT-23-3 (TO-236)
Current - Continuous Drain (Id) @ 25°C:
1A (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
NVR1P02
ECCN:
EAR99
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FAQs
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You can order onsemi brand products with NVR1P02T1G directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of P-Channel MOSFET, 1 A, 20 V, 3-Pin SOT-23 ON Semiconductor NVR1P02T1G. You can also check on our website or by contacting our customer support team for further order details on P-Channel MOSFET, 1 A, 20 V, 3-Pin SOT-23 ON Semiconductor NVR1P02T1G.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET21468861 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "onsemi" products on our website by using Enrgtech's Unique Manufacturing Part Number ET21468861.
Yes. We ship NVR1P02T1G Internationally to many countries around the world.
This is P-Channel MOSFET 1 A 20 V 3-Pin SOT-23 ON Semiconductor manufactured by onsemi. The manufacturer part number is NVR1P02T1G. It has a maximum of 20 v drain source voltage. With a typical gate charge at Vgs includes 2.5 nc @ 5 v. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 400 mw maximum power dissipation. It features a maximum gate source voltage of -20 v, +20 v. The product carries 2.3v of maximum gate threshold voltage. In addition, the height is 1.01mm. Furthermore, the product is 1.4mm wide. Its accurate length is 3.04mm. It provides up to 180 mω maximum drain source resistance. The package is a sort of sot-23. It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 1 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration. It is assigned with possible HTSUS value of 8541.21.0095. The product is rohs3 compliant. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-236-3, sc-59, sot-23-3. It has a maximum Rds On and voltage of 180mohm @ 1.5a, 10v. The maximum gate charge and given voltages include 2.5 nc @ 5 v. The typical Vgs (th) (max) of the product is 2.3v @ 250µa. In addition, it is reach unaffected. It carries FET type p-channel. The drive voltage (maximum and minimum Rds On) of the product includes 4.5v, 10v. It is shipped in tape & reel (tr) package . The product has a 20 v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 400mw (ta). The product's input capacitance at maximum includes 165 pf @ 5 v. It has a long 6 weeks standard lead time. The product is automotive, a grade of class. sot-23-3 (to-236) is the supplier device package value. The continuous current drain at 25°C is 1a (ta). This product use mosfet (metal oxide) technology. Moreover, it corresponds to nvr1p02, a base product number of the product. The product is designated with the ear99 code number.
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