N-Channel MOSFET, 830 mA, 250 V, 3 + Tab-Pin SOT-223 onsemi FQT4N25TF
Product Information
Maximum Continuous Drain Current:
830 mA
Transistor Material:
Si
Width:
3.7mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
250 V
Package Type:
SOT-223
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
3V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
4.3 nC @ 10 V
Channel Type:
N
Length:
6.7mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
2.5 W
Series:
QFET
Maximum Gate Source Voltage:
-30 V, +30 V
Height:
1.7mm
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
1.75 Ω
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
5V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-261-4, TO-261AA
Rds On (Max) @ Id, Vgs:
1.75Ohm @ 415mA, 10V
edacadModel:
FQT4N25TF Models
Gate Charge (Qg) (Max) @ Vgs:
5.6 nC @ 10 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
edacadModelUrl:
/en/models/1052388
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
250 V
Vgs (Max):
±30V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
2.5W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
200 pF @ 25 V
Mounting Type:
Surface Mount
Series:
QFET®
Supplier Device Package:
SOT-223-4
Current - Continuous Drain (Id) @ 25°C:
830mA (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
FQT4N25
ECCN:
EAR99
Checking for live stock
FAQs
Yes. You can also search FQT4N25TF on website for other similar products.
We accept all major payment methods for all products including ET21466553. Please check your shopping cart at the time of order.
You can order onsemi brand products with FQT4N25TF directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of N-Channel MOSFET, 830 mA, 250 V, 3 + Tab-Pin SOT-223 onsemi FQT4N25TF. You can also check on our website or by contacting our customer support team for further order details on N-Channel MOSFET, 830 mA, 250 V, 3 + Tab-Pin SOT-223 onsemi FQT4N25TF.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET21466553 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "onsemi" products on our website by using Enrgtech's Unique Manufacturing Part Number ET21466553.
Yes. We ship FQT4N25TF Internationally to many countries around the world.
This is N-Channel MOSFET 830 mA 250 V 3 + Tab-Pin SOT-223 manufactured by onsemi. The manufacturer part number is FQT4N25TF. While 830 ma of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 3.7mm wide. The product offers single transistor configuration. It has a maximum of 250 v drain source voltage. The package is a sort of sot-223. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 3v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 4.3 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 6.7mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 2.5 w maximum power dissipation. The product qfet, is a highly preferred choice for users. It features a maximum gate source voltage of -30 v, +30 v. In addition, the height is 1.7mm. Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 1.75 ω maximum drain source resistance. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 5v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-261-4, to-261aa. It has a maximum Rds On and voltage of 1.75ohm @ 415ma, 10v. The maximum gate charge and given voltages include 5.6 nc @ 10 v. The product is rohs3 compliant. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. It is shipped in tape & reel (tr) package . The product has a 250 v drain to source voltage. The maximum Vgs rate is ±30v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 2.5w (tc). The product's input capacitance at maximum includes 200 pf @ 25 v. The product qfet®, is a highly preferred choice for users. sot-223-4 is the supplier device package value. The continuous current drain at 25°C is 830ma (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to fqt4n25, a base product number of the product. The product is designated with the ear99 code number.
Reviews
Don’t hesitate to ask questions for better clarification.