Maximum Continuous Drain Current:
75 A
Transistor Material:
Si
Width:
4.7mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
55 V
Package Type:
TO-220AB
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2V
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
175 nC @ 20 V
Channel Type:
N
Length:
10.67mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Through Hole
Maximum Power Dissipation:
285 W
Series:
UltraFET
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
16.3mm
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
8 mΩ
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
4V @ 250µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-220-3
Rds On (Max) @ Id, Vgs:
8mOhm @ 75A, 10V
Gate Charge (Qg) (Max) @ Vgs:
210 nC @ 20 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
edacadModel:
HUF75344P3 Models
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
edacadModelUrl:
/en/models/1057139
Package:
Tube
Drain to Source Voltage (Vdss):
55 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
Not Applicable
Power Dissipation (Max):
285W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
3200 pF @ 25 V
standardLeadTime:
6 Weeks
Mounting Type:
Through Hole
Series:
UltraFET™
Supplier Device Package:
TO-220-3
Current - Continuous Drain (Id) @ 25°C:
75A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
HUF75344
ECCN:
EAR99
The HUF75344P3 is an N-Channel MOSFET, a field-effect transistor with negative charges as the majority carriers. It is designed to manage high currents and voltage levels, making it suitable for various power management applications. Its TO-220AB package allows easy integration into various power management applications, favouring it among engineers seeking high-performance MOSFETs.
Benefits Offered By onsemi HUF75344P3, N-Channel MOSFET, 75 A, 55 V, 3-Pin TO-220AB Include:
Potential Uses of onsemi HUF75344P3, N-Channel MOSFET, 75 A, 55 V, 3-Pin TO-220AB:
The HUF75344P3 MOSFET can be employed in various applications, including motor control, power supplies, DC-DC converters, automotive systems, and industrial automation. Its high current and voltage ratings and low on-resistance make it well-suited for demanding power management tasks.
Key Attributes of the Product:
With a current rating of 75 A, the HUF75344P3 can handle significant amounts of current, making it ideal for power electronics and high-power applications. Its robust construction allows for efficient current flow with minimal power dissipation.
The HUF75344P3 has a voltage rating of 55 V, enabling it to withstand high voltage levels without breakdown. This makes it perfect for applications demanding switching or control of high-voltage signals.
The HUF75344P3 comes in a 3-pin TO-220AB package. This package type is widely used in power electronics due to its excellent thermal performance and ease of mounting. It provides efficient heat dissipation, ensuring the MOSFET operates within safe temperature limits.
The HUF75344P3 features a low on-resistance (RDS(ON)) value, minimising power losses and improving overall efficiency. This feature is crucial in applications where low power dissipation and high switching speeds are desired.
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