Maximum Drain Source Voltage:
55 V
Typical Gate Charge @ Vgs:
36 nC @ 20 V
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Maximum Power Dissipation:
93 W
Series:
UltraFET
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
16.3mm
Width:
4.7mm
Length:
10.67mm
Minimum Gate Threshold Voltage:
2V
Package Type:
TO-220AB
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
35 A
Transistor Material:
Si
Maximum Drain Source Resistance:
34 mΩ
Channel Type:
N
Maximum Operating Temperature:
+175 °C
Pin Count:
3
Transistor Configuration:
Single
FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-220-3
Rds On (Max) @ Id, Vgs:
34mOhm @ 35A, 10V
Gate Charge (Qg) (Max) @ Vgs:
44 nC @ 20 V
Vgs(th) (Max) @ Id:
4V @ 250µA
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Drain to Source Voltage (Vdss):
55 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
Not Applicable
Power Dissipation (Max):
93W (Tc)
standardLeadTime:
19 Weeks
Input Capacitance (Ciss) (Max) @ Vds:
680 pF @ 25 V
Mounting Type:
Through Hole
Series:
UltraFET™
Supplier Device Package:
TO-220-3
Packaging:
Tube
Current - Continuous Drain (Id) @ 25°C:
35A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
HUF75321
ECCN:
EAR99
