Dual N-Channel MOSFET, 2.5 A, 30 V, 6-Pin WDFN onsemi NTLJD4116NT1G
Product Information
Maximum Drain Source Voltage:
30 V
Typical Gate Charge @ Vgs:
5.4 nC @ 4.5 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
2.3 W
Maximum Gate Source Voltage:
-8 V, +8 V
Maximum Gate Threshold Voltage:
1V
Height:
0.75mm
Width:
2mm
Length:
2mm
Maximum Drain Source Resistance:
250 mΩ
Package Type:
WDFN
Number of Elements per Chip:
2
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
2.5 A
Transistor Material:
Si
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
6
Transistor Configuration:
Isolated
FET Feature:
Logic Level Gate
HTSUS:
8541.21.0095
Vgs(th) (Max) @ Id:
1V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
6-WDFN Exposed Pad
Rds On (Max) @ Id, Vgs:
70mOhm @ 2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs:
6.5nC @ 4.5V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
Current - Continuous Drain (Id) @ 25°C:
2.5A
Configuration:
2 N-Channel (Dual)
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
30V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds:
427pF @ 15V
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
6-WDFN (2x2)
Power - Max:
710mW
Technology:
MOSFET (Metal Oxide)
Base Product Number:
NTLJD41
ECCN:
EAR99
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This is Dual N-Channel MOSFET 2.5 A 30 V 6-Pin WDFN manufactured by onsemi. The manufacturer part number is NTLJD4116NT1G. It has a maximum of 30 v drain source voltage. With a typical gate charge at Vgs includes 5.4 nc @ 4.5 v. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 2.3 w maximum power dissipation. It features a maximum gate source voltage of -8 v, +8 v. The product carries 1v of maximum gate threshold voltage. In addition, the height is 0.75mm. Furthermore, the product is 2mm wide. Its accurate length is 2mm. It provides up to 250 mω maximum drain source resistance. The package is a sort of wdfn. It consists of 2 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 2.5 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 6 pins. The product offers isolated transistor configuration. The FET features of the product include logic level gate. It is assigned with possible HTSUS value of 8541.21.0095. The typical Vgs (th) (max) of the product is 1v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in 6-wdfn exposed pad. It has a maximum Rds On and voltage of 70mohm @ 2a, 4.5v. The maximum gate charge and given voltages include 6.5nc @ 4.5v. The product is rohs3 compliant. In addition, it is reach unaffected. The continuous current drain at 25°C is 2.5a. The product is available in 2 n-channel (dual) configuration. It is shipped in tape & reel (tr) package . The product has a 30v drain to source voltage. Its typical moisture sensitivity level is 1 (unlimited). The product's input capacitance at maximum includes 427pf @ 15v. 6-wdfn (2x2) is the supplier device package value. The maximum power of the product is 710mw. This product use mosfet (metal oxide) technology. Moreover, it corresponds to ntljd41, a base product number of the product. The product is designated with the ear99 code number.
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