Maximum Drain Source Voltage:
30 V
Typical Gate Charge @ Vgs:
5.4 nC @ 4.5 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
2.3 W
Maximum Gate Source Voltage:
-8 V, +8 V
Maximum Gate Threshold Voltage:
1V
Height:
0.75mm
Width:
2mm
Length:
2mm
Maximum Drain Source Resistance:
250 mΩ
Package Type:
WDFN
Number of Elements per Chip:
2
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
2.5 A
Transistor Material:
Si
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
6
FET Feature:
Logic Level Gate
HTSUS:
8541.21.0095
Vgs(th) (Max) @ Id:
1V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
6-WDFN Exposed Pad
Rds On (Max) @ Id, Vgs:
70mOhm @ 2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs:
6.5nC @ 4.5V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
Current - Continuous Drain (Id) @ 25°C:
2.5A
Configuration:
2 N-Channel (Dual)
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
30V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds:
427pF @ 15V
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
6-WDFN (2x2)
Power - Max:
710mW
Technology:
MOSFET (Metal Oxide)
Base Product Number:
NTLJD41
ECCN:
EAR99
