Automotive Standard:
No
Maximum Power Dissipation Pd:
310mW
Product Type:
MOSFET
Maximum Drain Source Voltage Vds:
20V
Channel Mode:
Enhancement
Typical Gate Charge Qg @ Vgs:
2.1nC
Maximum Drain Source Resistance Rds:
1Ω
Maximum Gate Source Voltage Vgs:
6 V
Forward Voltage Vf:
-1.1V
Height:
0.8mm
Width:
0.95 mm
Length:
1.7mm
Package Type:
SC-89
Minimum Operating Temperature:
-55°C
Standards/Approvals:
No
Maximum Continuous Drain Current Id:
760mA
Channel Type:
Type P
Maximum Operating Temperature:
150°C
Pin Count:
3
Mount Type:
Surface
FET Feature:
-
HTSUS:
8541.21.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
SC-89, SOT-490
Rds On (Max) @ Id, Vgs:
360mOhm @ 350mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs:
2.1 nC @ 4.5 V
Vgs(th) (Max) @ Id:
1.2V @ 250µA
REACH Status:
REACH Unaffected
edacadModel:
NTE4151PT1G Models
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
1.8V, 4.5V
edacadModelUrl:
/en/models/687077
Drain to Source Voltage (Vdss):
20 V
Vgs (Max):
±6V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
313mW (Tj)
standardLeadTime:
18 Weeks
Input Capacitance (Ciss) (Max) @ Vds:
156 pF @ 5 V
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
SC-89-3
Packaging:
Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C:
760mA (Tj)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
NTE4151
ECCN:
EAR99
