SiC N-Channel MOSFET, 11 A, 900 V, 7-Pin D2PAK Wolfspeed C3M0280090J

C3M0280090J SiC N-Channel MOSFET, 11 A, 900 V, 7-Pin D2PAK Wolfspeed
Wolfspeed

Product Information

Maximum Continuous Drain Current:
11 A
Transistor Material:
SiC
Width:
9.12mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
900 V
Maximum Gate Threshold Voltage:
3.5V
Package Type:
TO-263-7
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
1.8V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
9.5 nC @ 4/15V
Channel Type:
N
Length:
10.23mm
Pin Count:
7
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
50 W
Maximum Gate Source Voltage:
-8 V, 18 V
Height:
4.57mm
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
280 mΩ
RoHs Compliant
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This is SiC N-Channel MOSFET 11 A 900 V 7-Pin D2PAK manufactured by Wolfspeed. The manufacturer part number is C3M0280090J. While 11 a of maximum continuous drain current. The transistor is manufactured from highly durable sic material. Furthermore, the product is 9.12mm wide. The product offers single transistor configuration. It has a maximum of 900 v drain source voltage. The product carries 3.5v of maximum gate threshold voltage. The package is a sort of to-263-7. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 1.8v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 9.5 nc @ 4/15v. The product is available in [Cannel Type] channel. Its accurate length is 10.23mm. It contains 7 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 50 w maximum power dissipation. It features a maximum gate source voltage of -8 v, 18 v. In addition, the height is 4.57mm. Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 280 mω maximum drain source resistance.

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Datasheet(Technical Reference)
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Datasheet - C3M0280090J(Technical Reference)

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