SSM6L13TU(TE85L,F) Dual N/P-Channel MOSFET, 800 mA, 20 V, 6-Pin UF Toshiba
Product Information
Category:
Small Signal
Dimensions:
2 x 1.7 x 0.7mm
Maximum Continuous Drain Current:
800 mA
Transistor Material:
Si
Width:
1.7mm
Transistor Configuration:
Isolated
Maximum Drain Source Voltage:
20 V
Maximum Gate Threshold Voltage:
1V
Package Type:
UF
Number of Elements per Chip:
2
Maximum Operating Temperature:
+150 °C
Channel Type:
N, P
Typical Input Capacitance @ Vds:
268 pF@ 10 V
Length:
2mm
Pin Count:
6
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
800 mW
Maximum Gate Source Voltage:
-12 V, +12 V
Height:
0.7mm
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
143 mΩ
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Yes. Our products in MOSFETs category are shipped in lowest possible time.
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This is Dual N/P-Channel MOSFET 800 mA 20 V 6-Pin UF manufactured by Toshiba. The manufacturer part number is SSM6L13TU(TE85L,F). It is of small signal category . The given dimensions of the product include 2 x 1.7 x 0.7mm. While 800 ma of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 1.7mm wide. The product offers isolated transistor configuration. It has a maximum of 20 v drain source voltage. The product carries 1v of maximum gate threshold voltage. The package is a sort of uf. It consists of 2 elements per chip. It has a maximum operating temperature of +150 °c. The product is available in [Cannel Type] channel. Its typical input capacitance @ Vds is 268 pf@ 10 v . Its accurate length is 2mm. It contains 6 pins. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 800 mw maximum power dissipation. It features a maximum gate source voltage of -12 v, +12 v. In addition, the height is 0.7mm. Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 143 mω maximum drain source resistance.
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