SSM3K116TU(TE85L) N-Channel MOSFET, 2.2 A, 30 V SSM3, 3-Pin UFM Toshiba

Enrgtech Part No: ET17548100
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Manufacturer Part No:
SSM3K116TU(TE85L)
|
Manufacturer: Toshiba

SSM3K116TU-TE85L- SSM3K116TU(TE85L) N-Channel MOSFET, 2.2 A, 30 V SSM3, 3-Pin UFM Toshiba

Product Information

Maximum Drain Source Voltage:

30 V

Mounting Type:

Surface Mount

Channel Mode:

Enhancement

Maximum Power Dissipation:

800 mW

Series:

SSM3

Maximum Gate Source Voltage:

-12 V, +12 V

Maximum Gate Threshold Voltage:

1.1V

Height:

0.7mm

Width:

1.7mm

Length:

2mm

Maximum Drain Source Resistance:

135 mΩ

Package Type:

UFM

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This is N-Channel MOSFET 2.2 A 30 V SSM3 3-Pin UFM manufactured by Toshiba. The manufacturer part number is SSM3K116TU(TE85L). It has a maximum of 30 v drain source voltage. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 800 mw maximum power dissipation. The product ssm3, is a highly preferred choice for users. It features a maximum gate source voltage of -12 v, +12 v. The product carries 1.1v of maximum gate threshold voltage. In addition, the height is 0.7mm. Furthermore, the product is 1.7mm wide. Its accurate length is 2mm. It provides up to 135 mω maximum drain source resistance. The package is a sort of ufm. It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 2.2 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration.

ESD Control Selection Guide V1(Technical Reference)

Transistor,FET,Nch,30V/2.2A,UFM(Technical Reference)

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SSM3K116TU(TE85L) N-Channel MOSFET, 2.2 A, 30 V SSM3, 3-Pin UFM Toshiba