NP52N055SUG-E1-AZ N-Channel MOSFET, 52 A, 55 V, 3-Pin DPAK Renesas
Product Information
Maximum Drain Source Voltage:
55 V
Typical Gate Charge @ Vgs:
38 nC @ 10 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
1.2 W
Maximum Gate Source Voltage:
-20 V, +20 V
Maximum Gate Threshold Voltage:
4V
Height:
2.3mm
Width:
6.1mm
Length:
6.5mm
Maximum Drain Source Resistance:
14 mΩ
Package Type:
DPAK (TO-252)
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
52 A
Transistor Material:
Si
Channel Type:
N
Maximum Operating Temperature:
+175 °C
Pin Count:
3
Transistor Configuration:
Single
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Yes. Our products in MOSFETs category are shipped in lowest possible time.
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Yes. We ship NP52N055SUG-E1-AZ Internationally to many countries around the world.
This is N-Channel MOSFET 52 A 55 V 3-Pin DPAK Renesas manufactured by Renesas Electronics. The manufacturer part number is NP52N055SUG-E1-AZ. It has a maximum of 55 v drain source voltage. With a typical gate charge at Vgs includes 38 nc @ 10 v. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 1.2 w maximum power dissipation. It features a maximum gate source voltage of -20 v, +20 v. The product carries 4v of maximum gate threshold voltage. In addition, the height is 2.3mm. Furthermore, the product is 6.1mm wide. Its accurate length is 6.5mm. It provides up to 14 mω maximum drain source resistance. The package is a sort of dpak (to-252). It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 52 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +175 °c. It contains 3 pins. The product offers single transistor configuration.
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