SSM3K14T(F) N-Channel MOSFET, 4 A, 30 V, 3-Pin TSM Toshiba

SSM3K14T-F- SSM3K14T(F) N-Channel MOSFET, 4 A, 30 V, 3-Pin TSM Toshiba
Toshiba

Product Information

Maximum Drain Source Voltage:
30 V
Typical Gate Charge @ Vgs:
5 nC @ 4 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
700 mW
Maximum Gate Source Voltage:
-20 V, +20 V
Maximum Gate Threshold Voltage:
2.5V
Height:
0.7mm
Width:
1.6mm
Length:
2.9mm
Maximum Drain Source Resistance:
39 mΩ
Package Type:
TSM
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
4 A
Transistor Material:
Si
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
RoHs Compliant
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This is N-Channel MOSFET 4 A 30 V 3-Pin TSM manufactured by Toshiba. The manufacturer part number is SSM3K14T(F). It has a maximum of 30 v drain source voltage. With a typical gate charge at Vgs includes 5 nc @ 4 v. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 700 mw maximum power dissipation. It features a maximum gate source voltage of -20 v, +20 v. The product carries 2.5v of maximum gate threshold voltage. In addition, the height is 0.7mm. Furthermore, the product is 1.6mm wide. Its accurate length is 2.9mm. It provides up to 39 mω maximum drain source resistance. The package is a sort of tsm. It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 4 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration.

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Semi,Descrete,MOSFET,(Technical Reference)

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