Category:
Power MOSFET
Dimensions:
10.4 x 9.2 x 4.7mm
Maximum Continuous Drain Current:
4 A
Width:
9.2mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
600 V
Maximum Gate Threshold Voltage:
4V
Package Type:
TO-263
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
15 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
250 pF @ 25 V
Length:
10.4mm
Pin Count:
3
Typical Turn-Off Delay Time:
55 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
58 W
Series:
R6004ENJ
Maximum Gate Source Voltage:
±30 V
Height:
4.7mm
Typical Turn-On Delay Time:
22 ns
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.5V
Maximum Drain Source Resistance:
980 mΩ
This is N-Channel MOSFET 4 A 600 V R6004ENJ 3-Pin D2PAK manufactured by ROHM. The manufacturer part number is R6004ENJTL. It is of power mosfet category . The given dimensions of the product include 10.4 x 9.2 x 4.7mm. While 4 a of maximum continuous drain current. Furthermore, the product is 9.2mm wide. The product offers single transistor configuration. It has a maximum of 600 v drain source voltage. The product carries 4v of maximum gate threshold voltage. The package is a sort of to-263. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 2v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 15 nc @ 10 v. The product is available in [Cannel Type] channel. Its typical input capacitance @ Vds is 250 pf @ 25 v . Its accurate length is 10.4mm. It contains 3 pins. Whereas, its typical turn-off delay time is about 55 ns . The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 58 w maximum power dissipation. The product r6004enj, is a highly preferred choice for users. It features a maximum gate source voltage of ±30 v. In addition, the height is 4.7mm. In addition, it has a typical 22 ns turn-on delay time . Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 1.5v . It provides up to 980 mω maximum drain source resistance.
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