Nch 600V 11A Power MOSFET
Product Information
Maximum Continuous Drain Current:
11 A
Width:
6.4mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
600 V
Maximum Gate Threshold Voltage:
5V
Package Type:
TO-252
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
3V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
22 nC @ 10 V
Channel Type:
N
Length:
6.8mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
124 W
Series:
R6011KND3
Maximum Gate Source Voltage:
±30 V
Height:
2.4mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.5V
Maximum Drain Source Resistance:
390 mΩ
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Yes. We ship R6011KND3TL1 Internationally to many countries around the world.
This is Nch 600V 11A Power MOSFET manufactured by ROHM. The manufacturer part number is R6011KND3TL1. While 11 a of maximum continuous drain current. Furthermore, the product is 6.4mm wide. The product offers single transistor configuration. It has a maximum of 600 v drain source voltage. The product carries 5v of maximum gate threshold voltage. The package is a sort of to-252. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 3v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 22 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 6.8mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 124 w maximum power dissipation. The product r6011knd3, is a highly preferred choice for users. It features a maximum gate source voltage of ±30 v. In addition, the height is 2.4mm. Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 1.5v . It provides up to 390 mω maximum drain source resistance.
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