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This is N-channel MOSFET 9.7 A 600 V DTMOSIV 3-Pin TO-220SIS manufactured by Toshiba. The manufacturer part number is TK10A60W,S4VX(M. It has a maximum of 600 v drain source voltage. With a typical gate charge at Vgs includes 20 nc @ 10 v. The product is available in through hole configuration. The product carries enhancement channel mode. Provides up to 30 w maximum power dissipation. The product dtmosiv, is a highly preferred choice for users. It features a maximum gate source voltage of -30 v, +30 v. The product carries 3.7v of maximum gate threshold voltage. In addition, the height is 15mm. Furthermore, the product is 4.5mm wide. Its accurate length is 10mm. Whereas its minimum gate threshold voltage includes 2.7v. The package is a sort of to-220sis. It consists of 1 elements per chip. While 9.7 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Its forward diode voltage is 1.7v . It provides up to 380 mω maximum drain source resistance. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 3 pins.
For more information please check the datasheets.
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£ 0.000
