Infineon BSZ042N06NSATMA1 N-channel MOSFET, 40 A, 60 V OptiMOS 5, 8-Pin TDSON
Product Information
Maximum Drain Source Voltage:
60 V
Typical Gate Charge @ Vgs:
27 nC @ 10 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
69 W
Series:
OptiMOS 5
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
1.1mm
Width:
3.4mm
Length:
3.4mm
Maximum Drain Source Resistance:
6.3 mΩ
Package Type:
TDSON
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
40 A
Transistor Material:
Si
Forward Diode Voltage:
1.2V
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
8
Transistor Configuration:
Single
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Yes. Our products in MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Infineon BSZ042N06NSATMA1 N-channel MOSFET, 40 A, 60 V OptiMOS 5, 8-Pin TDSON. You can also check on our website or by contacting our customer support team for further order details on Infineon BSZ042N06NSATMA1 N-channel MOSFET, 40 A, 60 V OptiMOS 5, 8-Pin TDSON.
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Yes. We ship BSZ042N06NSATMA1 Internationally to many countries around the world.
This is N-channel MOSFET 40 A 60 V OptiMOS 5 8-Pin TDSON manufactured by Infineon. The manufacturer part number is BSZ042N06NSATMA1. It has a maximum of 60 v drain source voltage. With a typical gate charge at Vgs includes 27 nc @ 10 v. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 69 w maximum power dissipation. The product optimos 5, is a highly preferred choice for users. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 1.1mm. Furthermore, the product is 3.4mm wide. Its accurate length is 3.4mm. It provides up to 6.3 mω maximum drain source resistance. The package is a sort of tdson. It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 40 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Its forward diode voltage is 1.2v . The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 8 pins. The product offers single transistor configuration.
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