Vishay SQM50P03-07-GE3 P-channel MOSFET, 50 A, 30 V SQ Rugged, 3-Pin D2PAK
Product Information
Maximum Continuous Drain Current:
50 A
Transistor Material:
Si
Width:
9.652mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
30 V
Package Type:
D2PAK (TO-263)
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
1.5V
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
103.5 nC @ 10 V
Channel Type:
P
Length:
10.41mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
150 W
Series:
SQ Rugged
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
4.826mm
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
11 mΩ
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Yes. Our products in MOSFETs category are shipped in lowest possible time.
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This is SQM50P03-07-GE3 P-channel MOSFET 50 A 30 V SQ Rugged 3-Pin D2PAK manufactured by Vishay. The manufacturer part number is SQM50P03-07_GE3. While 50 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 9.652mm wide. The product offers single transistor configuration. It has a maximum of 30 v drain source voltage. The package is a sort of d2pak (to-263). It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 1.5v. It has a maximum operating temperature of +175 °c. With a typical gate charge at Vgs includes 103.5 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 10.41mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 150 w maximum power dissipation. The product sq rugged, is a highly preferred choice for users. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 4.826mm. Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 11 mω maximum drain source resistance.
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