MOSFET P-Ch 30V 8A HEXFET SOIC8
Product Information
Maximum Drain Source Voltage:
30 V
Typical Gate Charge @ Vgs:
40 nC @ 10 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
2.5 W
Series:
Si4435DYPbF
Maximum Gate Source Voltage:
20 V
Height:
1.5mm
Width:
4mm
Length:
5mm
Maximum Drain Source Resistance:
35 mΩ
Package Type:
SO-8
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
8 A
Minimum Gate Threshold Voltage:
1V
Forward Diode Voltage:
1.2V
Channel Type:
P
Maximum Operating Temperature:
+150 °C
Pin Count:
8
Transistor Configuration:
Single
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Yes. We ship SI4435DYTRPBF Internationally to many countries around the world.
This is MOSFET P-Ch 30V 8A HEXFET SOIC8 manufactured by Infineon. The manufacturer part number is SI4435DYTRPBF. It has a maximum of 30 v drain source voltage. With a typical gate charge at Vgs includes 40 nc @ 10 v. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 2.5 w maximum power dissipation. The product si4435dypbf, is a highly preferred choice for users. It features a maximum gate source voltage of 20 v. In addition, the height is 1.5mm. Furthermore, the product is 4mm wide. Its accurate length is 5mm. It provides up to 35 mω maximum drain source resistance. The package is a sort of so-8. It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 8 a of maximum continuous drain current. Whereas its minimum gate threshold voltage includes 1v. Its forward diode voltage is 1.2v . The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 8 pins. The product offers single transistor configuration.
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