MOSFET P-Ch 30V 8A HEXFET SOIC8

Infineon

Product Information

Automotive Standard:
No
Maximum Power Dissipation Pd:
2.5W
Product Type:
MOSFET
Maximum Drain Source Voltage Vds:
30V
Channel Mode:
Enhancement
Typical Gate Charge Qg @ Vgs:
40nC
Series:
Si4435DYPbF
Maximum Gate Source Voltage Vgs:
20 V
Forward Voltage Vf:
-1.2V
Height:
1.5mm
Width:
4 mm
Length:
5mm
Package Type:
SO-8
Minimum Operating Temperature:
-55°C
Maximum Drain Source Resistance Rds:
35mΩ
Standards/Approvals:
No
Maximum Continuous Drain Current Id:
8A
Channel Type:
Type P
Maximum Operating Temperature:
150°C
Pin Count:
8
Mount Type:
Surface
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This is MOSFET P-Ch 30V 8A HEXFET SOIC8 manufactured by Infineon. The manufacturer part number is SI4435DYTRPBF. The product complies with automotive standard - no. mosfet is a versatile product designed to provide user-defined applications. The product carries enhancement channel mode. The product si4435dypbf, is a highly preferred choice for users. In addition, the height is 1.5mm. Furthermore, the product is 4 mm wide. Its accurate length is 5mm. The package is a sort of so-8. Whereas, the minimum operating temperature of the product is -55°c. The product is available in [Cannel Type] channel. It has a maximum operating temperature of 150°c. It contains 8 pins. It has a surface type mount .

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Datasheet(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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You will get a confirmation email regarding your order of MOSFET P-Ch 30V 8A HEXFET SOIC8. You can also check on our website or by contacting our customer support team for further order details on MOSFET P-Ch 30V 8A HEXFET SOIC8.