Maximum Drain Source Voltage:
60 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
200 mW
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
0.93mm
Width:
1.3mm
Length:
2.92mm
Minimum Gate Threshold Voltage:
1V
Package Type:
SOT-23
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
115 mA
Transistor Material:
Si
Maximum Drain Source Resistance:
7.5 Ω
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Manufacturer Standard Lead Time:
52 Weeks
Base Part Number:
2N7002
Detailed Description:
N-Channel 60V 115mA (Ta) 200mW (Ta) Surface Mount SOT-23 (TO-236AB)
Input Capacitance (Ciss) (Max) @ Vds:
50pF @ 25V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
2.5V @ 250µA
Drain to Source Voltage (Vdss):
60V
Vgs (Max):
±20V
Drive Voltage (Max Rds On, Min Rds On):
5V, 10V
Rds On (Max) @ Id, Vgs:
7.5Ohm @ 500mA, 10V
Supplier Device Package:
SOT-23 (TO-236AB)
Packaging:
Cut Tape (CT)
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
N-Channel
Customer Reference:
Package / Case:
TO-236-3, SC-59, SOT-23-3
Power Dissipation (Max):
200mW (Ta)
Current - Continuous Drain (Id) @ 25°C:
115mA (Ta)
Technology:
MOSFET (Metal Oxide)
Manufacturer:
ON Semiconductor
The ON Semiconductor 2N7002 is a versatile and efficient N-Channel MOSFET encapsulated in a compact SOT-23-3 package. This semiconductor device is designed to operate at 60V, with a drain current of 115 mA at ambient temperature (Ta). Its thermal power dissipation capacity is 200 mW at Ta, making it suitable for a wide range of electronic applications. The 2N7002 is known for its high-speed switching performance, low on-resistance, and minimal power loss during operation.
Crucial Features and Benefits
Typical Applications of the N-Channel MOSFET
The ON Semiconductor 2N7002 stands out for its efficiency, compactness, and versatility, making it a popular choice in a broad range of electronic applications, such as:
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