Vishay SI1032R-T1-GE3 N-channel MOSFET, 200 mA, 20 V, 3-Pin SOT-416

Vishay

Product Information

Automotive Standard:
No
Maximum Power Dissipation Pd:
340mW
Product Type:
MOSFET
Maximum Drain Source Voltage Vds:
20V
Channel Mode:
Enhancement
Maximum Gate Source Voltage Vgs:
±6 V
Series:
TrenchFET
Forward Voltage Vf:
1.2V
Height:
0.8mm
Width:
0.86 mm
Length:
1.68mm
Package Type:
SC-75
Minimum Operating Temperature:
-55°C
Maximum Drain Source Resistance Rds:
10Ω
Standards/Approvals:
IEC 61249-2-21, RoHS
Maximum Continuous Drain Current Id:
210mA
Channel Type:
Type N
Maximum Operating Temperature:
150°C
Pin Count:
3
Mount Type:
Surface
RoHs Compliant
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This is N-channel MOSFET 200 mA 20 V 3-Pin SOT-416 manufactured by Vishay. The manufacturer part number is SI1032R-T1-GE3. The product complies with automotive standard - no. mosfet is a versatile product designed to provide user-defined applications. The product carries enhancement channel mode. The product trenchfet, is a highly preferred choice for users. In addition, the height is 0.8mm. Furthermore, the product is 0.86 mm wide. Its accurate length is 1.68mm. The package is a sort of sc-75. Whereas, the minimum operating temperature of the product is -55°c. The product is available in [Cannel Type] channel. It has a maximum operating temperature of 150°c. It contains 3 pins. It has a surface type mount .

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Si1032R/X, N-Channel 1.5V (Gate-Source) MOSFET Data Sheet(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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