Vishay SI1032R-T1-GE3 N-channel MOSFET, 200 mA, 20 V, 3-Pin SOT-416

SI1032R-T1-GE3 Vishay  N-channel MOSFET, 200 mA, 20 V, 3-Pin SOT-416
Vishay

Product Information

Maximum Drain Source Voltage:
20 V
Typical Gate Charge @ Vgs:
750 nC @ 4.5 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
280 mW
Maximum Gate Source Voltage:
-6 V, +6 V
Height:
0.8mm
Width:
0.86mm
Length:
1.68mm
Minimum Gate Threshold Voltage:
0.4V
Package Type:
SC-75
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
200 mA
Transistor Material:
Si
Maximum Drain Source Resistance:
9 Ω
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
RoHs Compliant
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This is N-channel MOSFET 200 mA 20 V 3-Pin SOT-416 manufactured by Vishay. The manufacturer part number is SI1032R-T1-GE3. It has a maximum of 20 v drain source voltage. With a typical gate charge at Vgs includes 750 nc @ 4.5 v. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 280 mw maximum power dissipation. It features a maximum gate source voltage of -6 v, +6 v. In addition, the height is 0.8mm. Furthermore, the product is 0.86mm wide. Its accurate length is 1.68mm. Whereas its minimum gate threshold voltage includes 0.4v. The package is a sort of sc-75. It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 200 ma of maximum continuous drain current. The transistor is manufactured from highly durable si material. It provides up to 9 ω maximum drain source resistance. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration.

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Si1032R/X, N-Channel 1.5V (Gate-Source) MOSFET Data Sheet(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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