Toshiba TPH8R903NL,LQ(S N-channel MOSFET, 38 A, 30 V U-MOSVIII-H, 8-Pin SOP
Product Information
Maximum Continuous Drain Current:
38 A
Transistor Material:
Si
Width:
5mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
30 V
Maximum Gate Threshold Voltage:
2.3V
Package Type:
SOP
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
1.3V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
9.8 nC @ 10 V
Channel Type:
N
Length:
5mm
Pin Count:
8
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
24 W
Series:
U-MOSVIII-H
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
0.95mm
Forward Diode Voltage:
1.2V
Maximum Drain Source Resistance:
12.7 mΩ
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This is N-channel MOSFET 38 A 30 V U-MOSVIII-H 8-Pin SOP manufactured by Toshiba. The manufacturer part number is TPH8R903NL,LQ(S. While 38 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 5mm wide. The product offers single transistor configuration. It has a maximum of 30 v drain source voltage. The product carries 2.3v of maximum gate threshold voltage. The package is a sort of sop. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 1.3v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 9.8 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 5mm. It contains 8 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 24 w maximum power dissipation. The product u-mosviii-h, is a highly preferred choice for users. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 0.95mm. Its forward diode voltage is 1.2v . It provides up to 12.7 mω maximum drain source resistance.
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