NXP PSMN7R0-60YS,115 N-channel MOSFET, 89 A, 60 V, 4-Pin SOT-669
Product Information
Maximum Continuous Drain Current:
89 A
Transistor Material:
Si
Width:
4.1mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
60 V
Maximum Gate Threshold Voltage:
4V
Package Type:
LFPAK, SOT-669
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2V
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
45 nC @ 10 V
Channel Type:
N
Length:
5mm
Pin Count:
4
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
117 W
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
1.1mm
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
10.2 mΩ
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This is NXP N-channel MOSFET 89 A 60 V 4-Pin SOT-669 manufactured by Nexperia. The manufacturer part number is PSMN7R0-60YS,115. While 89 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 4.1mm wide. The product offers single transistor configuration. It has a maximum of 60 v drain source voltage. The product carries 4v of maximum gate threshold voltage. The package is a sort of lfpak, sot-669. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 2v. It has a maximum operating temperature of +175 °c. With a typical gate charge at Vgs includes 45 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 5mm. It contains 4 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 117 w maximum power dissipation. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 1.1mm. Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 10.2 mω maximum drain source resistance.
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