Nexperia BUK9M28-80EX N-channel MOSFET, 33 A, 80 V, 4-Pin LFPAK33, Power33
Product Information
Maximum Continuous Drain Current:
33 A
Width:
2.6mm
Automotive Standard:
AEC-Q101
Transistor Configuration:
Single
Maximum Drain Source Voltage:
80 V
Maximum Gate Threshold Voltage:
2.45V
Package Type:
LFPAK33
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
0.5V
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
6.1 nC @ 10 V
Channel Type:
N
Length:
3.4mm
Pin Count:
4
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
75 W
Maximum Gate Source Voltage:
15 V
Height:
0.9mm
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
70 mΩ
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Yes. Our products in MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Nexperia BUK9M28-80EX N-channel MOSFET, 33 A, 80 V, 4-Pin LFPAK33, Power33. You can also check on our website or by contacting our customer support team for further order details on Nexperia BUK9M28-80EX N-channel MOSFET, 33 A, 80 V, 4-Pin LFPAK33, Power33.
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Yes. We ship BUK9M28-80EX Internationally to many countries around the world.
This is N-channel MOSFET 33 A 80 V 4-Pin LFPAK33 Power33 manufactured by Nexperia. The manufacturer part number is BUK9M28-80EX. While 33 a of maximum continuous drain current. Furthermore, the product is 2.6mm wide. The product complies with automotive standard - aec-q101. The product offers single transistor configuration. It has a maximum of 80 v drain source voltage. The product carries 2.45v of maximum gate threshold voltage. The package is a sort of lfpak33. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 0.5v. It has a maximum operating temperature of +175 °c. With a typical gate charge at Vgs includes 6.1 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 3.4mm. It contains 4 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 75 w maximum power dissipation. It features a maximum gate source voltage of 15 v. In addition, the height is 0.9mm. Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 70 mω maximum drain source resistance.
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