This is N-channel MOSFET 5 A 500 V 3-Pin TO-220SIS manufactured by Toshiba. The manufacturer part number is TK5A50D,S5Q(J. While 5 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 4.5mm wide. The product offers single transistor configuration. It has a maximum of 500 v drain source voltage. The product carries 4.4v of maximum gate threshold voltage. The package is a sort of to-220sis. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 2.4v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 11 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 10mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in through hole configuration. Provides up to 35 w @ 25 °c maximum power dissipation. It features a maximum gate source voltage of +30 v. In addition, the height is 15mm. Its forward diode voltage is -1.7v . It provides up to 1.5 ω maximum drain source resistance.
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This is N-channel MOSFET 5 A 500 V 3-Pin TO-220SIS manufactured by Toshiba. The manufacturer part number is TK5A50D,S5Q(J. While 5 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 4.5mm wide. The product offers single transistor configuration. It has a maximum of 500 v drain source voltage. The product carries 4.4v of maximum gate threshold voltage. The package is a sort of to-220sis. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 2.4v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 11 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 10mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in through hole configuration. Provides up to 35 w @ 25 °c maximum power dissipation. It features a maximum gate source voltage of +30 v. In addition, the height is 15mm. Its forward diode voltage is -1.7v . It provides up to 1.5 ω maximum drain source resistance.
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Don’t hesitate to ask questions for better clarification.