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United Kingdom
This is N-channel MOSFET 25 A 600 V DTMOSIV 3-Pin TO-220SIS manufactured by Toshiba. The manufacturer part number is TK25A60X,S5X(M. It has a maximum of 600 v drain source voltage. With a typical gate charge at Vgs includes 40 nc @ 10 v. The product is available in through hole configuration. The product carries enhancement channel mode. Provides up to 45 w maximum power dissipation. The product dtmosiv, is a highly preferred choice for users. It features a maximum gate source voltage of -30 v, +30 v. The product carries 3.5v of maximum gate threshold voltage. In addition, the height is 15mm. Furthermore, the product is 4.5mm wide. Its accurate length is 10mm. Whereas its minimum gate threshold voltage includes 2.5v. The package is a sort of to-220sis. It consists of 1 elements per chip. While 25 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Its forward diode voltage is 1.7v . It provides up to 125 mω maximum drain source resistance. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 3 pins.
For more information please check the datasheets.
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£ 0.000
