Infineon SPW16N50C3FKSA1 N-channel MOSFET, 16 A, 560 V CoolMOS C3, 3-Pin TO-247

Infineon

Product Information

Maximum Drain Source Voltage:
560 V
Typical Gate Charge @ Vgs:
66 nC @ 10 V
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Maximum Power Dissipation:
160 W
Series:
CoolMOS™ C3
Maximum Gate Source Voltage:
-20 V, +20 V
Maximum Gate Threshold Voltage:
3.9V
Height:
21.1mm
Width:
5.21mm
Length:
16.13mm
Maximum Drain Source Resistance:
280 mΩ
Package Type:
TO-247
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
16 A
Minimum Gate Threshold Voltage:
2.1V
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
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This is N-channel MOSFET 16 A 560 V CoolMOS C3 3-Pin TO-247 manufactured by Infineon. The manufacturer part number is SPW16N50C3FKSA1. It has a maximum of 560 v drain source voltage. With a typical gate charge at Vgs includes 66 nc @ 10 v. The product is available in through hole configuration. The product carries enhancement channel mode. Provides up to 160 w maximum power dissipation. The product coolmos™ c3, is a highly preferred choice for users. It features a maximum gate source voltage of -20 v, +20 v. The product carries 3.9v of maximum gate threshold voltage. In addition, the height is 21.1mm. Furthermore, the product is 5.21mm wide. Its accurate length is 16.13mm. It provides up to 280 mω maximum drain source resistance. The package is a sort of to-247. It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 16 a of maximum continuous drain current. Whereas its minimum gate threshold voltage includes 2.1v. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration.

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SPW16N50C3, CoolMOS Power Transistor(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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