Infineon IRLHS2242TRPBF P-channel MOSFET, 7.2 A, 20 V HEXFET, 6-Pin PQFN
Product Information
Maximum Continuous Drain Current:
7.2 A
Width:
2.1mm
Maximum Drain Source Voltage:
20 V
Maximum Gate Threshold Voltage:
1.1V
Package Type:
DFN2020
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
0.4V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
12 nC @ 10 V
Channel Type:
P
Length:
2.1mm
Pin Count:
6
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
9.6 W
Series:
HEXFET
Maximum Gate Source Voltage:
-12 V, +12 V
Height:
0.95mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.2V
Maximum Drain Source Resistance:
53 mΩ
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Yes. We ship IRLHS2242TRPBF Internationally to many countries around the world.
This is P-channel MOSFET 7.2 A 20 V HEXFET 6-Pin PQFN manufactured by Infineon. The manufacturer part number is IRLHS2242TRPBF. While 7.2 a of maximum continuous drain current. Furthermore, the product is 2.1mm wide. It has a maximum of 20 v drain source voltage. The product carries 1.1v of maximum gate threshold voltage. The package is a sort of dfn2020. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 0.4v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 12 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 2.1mm. It contains 6 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 9.6 w maximum power dissipation. The product hexfet, is a highly preferred choice for users. It features a maximum gate source voltage of -12 v, +12 v. In addition, the height is 0.95mm. Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 1.2v . It provides up to 53 mω maximum drain source resistance.
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