Infineon IRFR7546TRPBF N-channel MOSFET, 71 A, 60 V HEXFET, 3-Pin DPAK

Infineon

Product Information

Maximum Drain Source Voltage:
60 V
Typical Gate Charge @ Vgs:
58 nC @ 20 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
99 W
Series:
HEXFET
Maximum Gate Source Voltage:
-20 V, +20 V
Maximum Gate Threshold Voltage:
3.7V
Height:
6.22mm
Width:
2.39mm
Length:
6.73mm
Maximum Drain Source Resistance:
7.9 mΩ
Package Type:
DPAK (TO-252)
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
71 A
Minimum Gate Threshold Voltage:
2.1V
Forward Diode Voltage:
1.2V
Channel Type:
N
Maximum Operating Temperature:
+175 °C
Pin Count:
3
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This is N-channel MOSFET 71 A 60 V HEXFET 3-Pin DPAK manufactured by Infineon. The manufacturer part number is IRFR7546TRPBF. It has a maximum of 60 v drain source voltage. With a typical gate charge at Vgs includes 58 nc @ 20 v. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 99 w maximum power dissipation. The product hexfet, is a highly preferred choice for users. It features a maximum gate source voltage of -20 v, +20 v. The product carries 3.7v of maximum gate threshold voltage. In addition, the height is 6.22mm. Furthermore, the product is 2.39mm wide. Its accurate length is 6.73mm. It provides up to 7.9 mω maximum drain source resistance. The package is a sort of dpak (to-252). It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 71 a of maximum continuous drain current. Whereas its minimum gate threshold voltage includes 2.1v. Its forward diode voltage is 1.2v . The product is available in [Cannel Type] channel. It has a maximum operating temperature of +175 °c. It contains 3 pins.

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IRFR7546PbF, IRFU7546PbF, StrongIRFET HEXFET Power MOSFET 60V(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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