Infineon IPB081N06L3GATMA1 N-channel MOSFET, 50 A, 60 V OptiMOS 3, 3-Pin D2PAK
Product Information
Maximum Continuous Drain Current:
50 A
Transistor Material:
Si
Width:
9.45mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
60 V
Maximum Gate Threshold Voltage:
2.2V
Package Type:
D2PAK (TO-263)
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
1.2V
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
22 nC @ 4.5 V
Channel Type:
N
Length:
10.31mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
79 W
Series:
OptiMOS 3
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
4.57mm
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
8.1 mΩ
Checking for live stock
FAQs
Yes. You can also search IPB081N06L3GATMA1 on website for other similar products.
We accept all major payment methods for all products including ET16793123. Please check your shopping cart at the time of order.
You can order Infineon brand products with IPB081N06L3GATMA1 directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Infineon IPB081N06L3GATMA1 N-channel MOSFET, 50 A, 60 V OptiMOS 3, 3-Pin D2PAK. You can also check on our website or by contacting our customer support team for further order details on Infineon IPB081N06L3GATMA1 N-channel MOSFET, 50 A, 60 V OptiMOS 3, 3-Pin D2PAK.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET16793123 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "Infineon" products on our website by using Enrgtech's Unique Manufacturing Part Number ET16793123.
Yes. We ship IPB081N06L3GATMA1 Internationally to many countries around the world.
This is N-channel MOSFET 50 A 60 V OptiMOS 3 3-Pin D2PAK manufactured by Infineon. The manufacturer part number is IPB081N06L3GATMA1. While 50 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 9.45mm wide. The product offers single transistor configuration. It has a maximum of 60 v drain source voltage. The product carries 2.2v of maximum gate threshold voltage. The package is a sort of d2pak (to-263). It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 1.2v. It has a maximum operating temperature of +175 °c. With a typical gate charge at Vgs includes 22 nc @ 4.5 v. The product is available in [Cannel Type] channel. Its accurate length is 10.31mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 79 w maximum power dissipation. The product optimos 3, is a highly preferred choice for users. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 4.57mm. Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 8.1 mω maximum drain source resistance.
Reviews
Don’t hesitate to ask questions for better clarification.