Infineon BUZ30AHXKSA1 N-channel MOSFET, 21 A, 200 V SIPMOS, 3-Pin TO-220

BUZ30AHXKSA1 Infineon  N-channel MOSFET, 21 A, 200 V SIPMOS, 3-Pin TO-220
BUZ30AHXKSA1
Infineon

Product Information

Maximum Drain Source Voltage:
200 V
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Maximum Power Dissipation:
125 W
Series:
SIPMOS
Maximum Gate Source Voltage:
-20 V, +20 V
Maximum Gate Threshold Voltage:
4V
Height:
9.25mm
Width:
4.4mm
Length:
10mm
Maximum Drain Source Resistance:
130 mΩ
Package Type:
TO-220
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
21 A
Minimum Gate Threshold Voltage:
2.1V
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
3
RoHs Compliant
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This is N-channel MOSFET 21 A 200 V SIPMOS 3-Pin TO-220 manufactured by Infineon. The manufacturer part number is BUZ30AHXKSA1. It has a maximum of 200 v drain source voltage. The product is available in through hole configuration. The product carries enhancement channel mode. Provides up to 125 w maximum power dissipation. The product sipmos, is a highly preferred choice for users. It features a maximum gate source voltage of -20 v, +20 v. The product carries 4v of maximum gate threshold voltage. In addition, the height is 9.25mm. Furthermore, the product is 4.4mm wide. Its accurate length is 10mm. It provides up to 130 mω maximum drain source resistance. The package is a sort of to-220. It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 21 a of maximum continuous drain current. Whereas its minimum gate threshold voltage includes 2.1v. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 3 pins.

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Datasheet(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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