Infineon BSP373NH6327XTSA1 N-channel MOSFET, 1.7 A, 100 V SIPMOS, 3+Tab-Pin SOT-223

Infineon

Product Information

Maximum Drain Source Voltage:
100 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
1.8 W
Series:
SIPMOS®
Maximum Gate Source Voltage:
-20 V, +20 V
Maximum Gate Threshold Voltage:
4V
Height:
1.6mm
Width:
3.5mm
Length:
6.5mm
Minimum Gate Threshold Voltage:
2.1V
Package Type:
SOT-223
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
1.7 A
Transistor Material:
Si
Maximum Drain Source Resistance:
300 mΩ
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
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This is N-channel MOSFET 1.7 A 100 V SIPMOS 3+Tab-Pin SOT-223 manufactured by Infineon. The manufacturer part number is BSP373NH6327XTSA1. It has a maximum of 100 v drain source voltage. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 1.8 w maximum power dissipation. The product sipmos®, is a highly preferred choice for users. It features a maximum gate source voltage of -20 v, +20 v. The product carries 4v of maximum gate threshold voltage. In addition, the height is 1.6mm. Furthermore, the product is 3.5mm wide. Its accurate length is 6.5mm. Whereas its minimum gate threshold voltage includes 2.1v. The package is a sort of sot-223. It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 1.7 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. It provides up to 300 mω maximum drain source resistance. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration.

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BSP373, SIPMOS® Small-Signal-Transistor MOSFET(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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