Infineon BSP129H6327XTSA1 N-channel MOSFET, 350 mA, 240 V Depletion SIPMOS, 3+Tab-Pin SOT-223

BSP129H6327XTSA1 Infineon  N-channel MOSFET, 350 mA, 240 V Depletion SIPMOS, 3+Tab-Pin SOT-223
Infineon

Product Information

Maximum Continuous Drain Current:
350 mA
Transistor Material:
Si
Width:
3.5mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
240 V
Maximum Gate Threshold Voltage:
1V
Package Type:
SOT-223
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2.1V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
3.8 nC @ 5 V
Channel Type:
N
Length:
6.5mm
Pin Count:
3
Channel Mode:
Depletion
Mounting Type:
Surface Mount
Maximum Power Dissipation:
1.8 W
Series:
SIPMOS
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
1.6mm
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
20 Ω
RoHs Compliant
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This is N-channel MOSFET 350 mA 240 V Depletion SIPMOS 3+Tab-Pin SOT-223 manufactured by Infineon. The manufacturer part number is BSP129H6327XTSA1. While 350 ma of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 3.5mm wide. The product offers single transistor configuration. It has a maximum of 240 v drain source voltage. The product carries 1v of maximum gate threshold voltage. The package is a sort of sot-223. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 2.1v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 3.8 nc @ 5 v. The product is available in [Cannel Type] channel. Its accurate length is 6.5mm. It contains 3 pins. The product carries depletion channel mode. The product is available in surface mount configuration. Provides up to 1.8 w maximum power dissipation. The product sipmos, is a highly preferred choice for users. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 1.6mm. Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 20 ω maximum drain source resistance.

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Datasheet(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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